SMD Type
Product specification
FDN340P
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for portable electronics
applications: Load switching and power management,
battery charging circuits, and DC/DC conversion.
Features
–2 A, 20 V.
R
DS(ON)
= 0.07
Ω
@ V
GS
= –4.5 V
R
DS(ON)
= 0.11
Ω
@ V
GS
= –2.5 V.
R
DS(ON)
= 0.210
Ω
@ V
GS
= –1.8 V.
•
Low gate charge (8nC typical).
•
High performance trench technology for extremely
low R
DS(ON)
.
•
High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling capability.
D
0
34
D
SuperSOT -3
G
TM
S
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25
o
C unless otherwise noted
Parameter
Ratings
–20
±8
(Note 1a)
Units
V
V
A
–2
–10
0.5
0.46
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
W
°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJ
C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
340
Device
FDN340P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2
TYSEMI [ TY Semiconductor Co., Ltd ]
