SMD Type
Product specification
FDN352AP
Features
■
–1.3 A, –30V
–1.1 A, –30V
R
DS(ON)
= 180 m
Ω
@ V
GS
= –10V
R
DS(ON)
= 300 m
Ω
@ V
GS
= –4.5V
■
High performance trench technology for extremely low
R
DS(ON)
.
■
High power version of industry Standard SOT-23 package.
Identical pin-out to SOT-23 with 30% higher power handling
capability.
General Description
This P-Channel Logic Level MOSFET is produced using Fair-
child Semiconductor advanced Power Trench process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching perfor-
mance.
These devices are well suited for low voltage and battery pow-
ered applications where low in-line power loss is needed in a
very small outline surface mount package.
Applications
■
Notebook computer power management
D
D
S
G
G
S
SuperSOT™-3
Absolute Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
R
θ
JA
R
θ
JC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
Parameter
Ratings
–30
±
25
–1.3
–10
0.5
0.46
Units
V
V
A
W
°
C
°
C/W
Operating and Storage Junction Temperature Range
–55 to +150
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
250
75
Package Marking and Ordering Information
Device Marking
52AP
Device
FDN352AP
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2
TYSEMI [ TY Semiconductor Co., Ltd ]
