SMD Type
Product specification
FDN5618P
General Description
This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Features
•
–1.25 A, –60 V. R
DS(ON)
= 0.170
Ω
@ V
GS
= –10 V
R
DS(ON)
= 0.230
Ω
@ V
GS
= –4.5 V
•
Fast switching speed
•
High performance trench technology for extremely
low R
DS(ON)
Applications
•
DC-DC converters
•
Load switch
•
Power management
D
D
S
SuperSOT -3
TM
G
T
A
=25 C unless otherwise noted
o
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
P
D
T
J
, T
STG
Maximum Power Dissipation
Parameter
Ratings
–60
±20
(Note 1a)
Units
V
V
A
W
°C
–1.25
–10
0.5
0.46
–55 to +150
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
618
Device
FDN5618P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
http://www.twtysemi.com
4008-318-123
1 of 2
TYSEMI [ TY Semiconductor Co., Ltd ]
