Product specification
FDS9926A
FDS9926A
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
These N-Channel 2.5V specified MOSFETs use
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 10V).
Features
•
6.5 A, 20 V.
R
DS(ON)
= 0.030
Ω
@ V
GS
= 4.5 V
R
DS(ON)
= 0.043
Ω
@ V
GS
= 2.5 V.
•
Optimized for use in battery protection circuits
• ±10
V
GSS
allows for wide operating voltage range
•
Low gate charge
Applications
•
Battery protection
•
Load switch
•
Power management
D1
D1
D2
D2
S1
G1
5
6
7
Q1
4
3
2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
20
±10
(Note 1a)
Units
V
V
A
W
6.5
20
2
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
1.6
1
0.9
-55 to +150
°C
T
J
, T
STG
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS9926A
Device
FDS9926A
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
TYSEMI [ TY Semiconductor Co., Ltd ]
