SMD Type
Product specification
FDV304P
Digital FET, P-Channel
General Description
This P-Channel enhancement mode field effect transistors is
produced using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is tailored to minimize
on-state resistance at low gate drive conditions. This device is
designed especially for application in battery power applications
such as notebook computers and cellular phones. This device
has excellent on-state resistance even at gate drive voltages as
low as 2.5 volts.
Features
-25 V, -0.46 A continuous, -1.5 A Peak.
R
DS(ON)
= 1.1
Ω
@ V
GS
= -4.5 V
R
DS(ON)
= 1.5
Ω
@ V
GS
= -2.7 V.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
GS(th)
< 1.5V.
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Compact industry standard SOT-23 surface mount
package.
SOT-23
Mark:304
SuperSOT
TM
-6
SuperSOT
TM
-8
SO-8
SOT-223
SOIC-16
D
G
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
,T
STG
ESD
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
T
A
= 25
o
C unless other wise noted
FDV304P
-25
-8
Units
V
V
A
- Continuous
- Pulsed
-0.46
-1.5
0.35
-55 to 150
6.0
Maximum Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
W
°C
kV
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
357
°C/W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
