SMD Type
Transistors
IC
Transistor
Product specification
FMMT617TA
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
+0.1
2.4
-0.1
■
Features
●
Power Dissipation: P
tot
=625mW
●
Collector Current: I
C
=3A
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
0.97
1.Base
2.Emitter
3.collector
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current *1
Power Dissipation at Tamb =25℃*2
Operating and Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
j
:T
stg
Rating
15
15
5
3
12
625
-55 to +150
Unit
V
V
V
A
A
mW
℃
*1. Measured under pulsed conditions. Pulse width=300ms. Duty cycle
≤2%
*2.Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
+0.1
0.38
-0.1
0-0.1
+0.1
-0.1
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
