SMD Type
Transistors
Diodes
IC
Transistor
T
Product specification
KTC4374
SOT-89
Unit:mm
1.50 ±0.1
■
Features
●
Collector Power Dissipation: P
C
=500mW
●
Collector Current: I
C
=400mA
4.50±0.1
1.80±0.1
1
0.48±0.1
2
3
0.80±0.1
0.44±0.1
0.53±0.1
3.00±0.1
0.40±0.1
2.60±0.1
2.50±0.1
4.00±0.1
1.Base
2.Collector
3.Emitter
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
80
80
5
400
500
150
-55 to 150
Unit
V
V
V
mA
mW
℃
℃
■
Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition frequency
Collector Output Capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE
f
T
C
ob
Test conditons
I
C
= 1mA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=1mA, I
C
=0
V
CB
=80V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=50mA
V
CE
=2V, I
C
=200mA
I
C
=200mA, I
B
=20mA
V
CE
=2V, I
C
=5mA
V
CE
=10V, I
C
=10mA
V
CB
=10V, I
E
=0, f=1MHz
100
10
70
50
0.4
0.8
V
V
MHz
pF
Min
80
80
5
100
100
240
Typ
Max
Unit
V
V
V
nA
nA
■
h
FE
Classification
Marking
Rank
Range
EO
O
70½140
EY
Y
120
½240
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4008-318-123
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TYSEMI [ TY Semiconductor Co., Ltd ]
