SMD Type
Product specification
NDS0605
General Description
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been designed to minimize on-state resistance, provide rugged
and reliable performance and fast switching. They can be
used, with a minimum of effort, in most applications requiring
up to 0.18A DC and can deliver pulsed currents up to 1A. This
product is particularly suited to low voltage applications
requiring a low current high side switch.
Features
-0.18A, -60V. R
DS(ON)
= 5
Ω
@ V
GS
= -10V.
Voltage controlled p-channel small signal switch.
High density cell design for low R
DS(ON)
.
High saturation current
.
___________________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter
V
DSS
V
DGR
V
GSS
I
D
P
D
Drain-Source Voltage
Drain-Gate Voltage (R
GS
< 1 M
Ω
)
Gate-Source Voltage - Continuous
Drain Current - Continuous
- Pulsed
Maximum Power Dissipation
T
A
= 25°C unless otherwise noted
NDS0605
-60
-60
±20
-0.18
-1
T
A
= 25°C
0.36
2.9
-55 to 150
300
Units
V
V
V
A
W
mW/
o
C
°C
°C
Derate above 25°C
T
J
,T
STG
T
L
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/16" from case for 10 seconds
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistance, Junction-to-Ambient
350
°C/W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2
TYSEMI [ TY Semiconductor Co., Ltd ]
