AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-514A4 is an infrared emitting diodes in
GaAs technology with AlGaAs window coating
encapsulated in water clear package.
7.62
(.300)
MIE-514A4
Package Dimensions
φ5.05
(.200)
Unit: mm (inches)
5.47
(.215)
5.90
(.230)
1.00
(.040)
Features
l
SEE NOTE 2
FLAT DENOTES CATHODE
High radiant power and high radiantintensity
Standard T-1 3/4 (
φ
5mm) package
Peak wavelength
λ
p
= 940 nm
Good spectral matching to si-photodetector
Radiant angle : 16°
2.54NOM.
(.100)
SEE NOTE 3
1.00MIN.
(.040)
0.50 TYP.
(.020)
23.40 MIN
(.920)
l
l
l
l
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
o
@ T
T
A
=25
o
C
@
A
=25
C
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55 C to +100 C
o
o
-55 C to +100 C
o
o
Unit
mW
A
mA
V
260
o
C for 5 seconds
Unity Opto Technology Co., Ltd.
11/17/2000
UOT [ UNITY OPTO TECHNOLOGY ]
