AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
Description
The MIE-534A4 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
MIE-534A4
Unit: mm ( inches )
Package Dimensions
φ
5.05
(.199)
5.47
(.215)
7.62
(.300)
5.90
(.230)
Features
SEE NOTE 2
l
l
l
l
l
1.00
(.039)
High radiant power and high radiant intensity
FLAT DENOTES CATHODE
Suitable for DC and high pulse current operation
Standard T-1 3/4 (
φ
5mm ) package, radiant angle : 30°
Peak wavelength
λ
p
= 940 nm
Good spectral matching to si-photodetector
0.50 TYP.
(.020)
23.40 MIN.
(.921)
1.00MIN.
(.039)
2.54 NOM.
(.100)
SEE NOTE 3
A
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@
@
A
=25
o
C
T
T
A
=25
o
Parameter
Power Dissipation
Peak Forward Current(300pps,10µs pulse)
Continuos Forward Current
Reverse Voltage
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Maximum Rating
120
1
100
5
-55
o
C to +100
o
C
-55
o
C to +100
o
C
260
o
C for 5 seconds
Unit
mW
A
mA
V
Unity Opto Technology Co., Ltd.
11/20/2000
UOT [ UNITY OPTO TECHNOLOGY ]
