SMD Type Reflective Photo Sensor
Subminiature Photointerrupter
Description
The MIR-3307-TC11 consists of a Gallium Arsenide
infrared emitting diode and a NPN silicon phototran-
sistor built in a black plastic housing. It is a refl-
ective subminiature photointerrupter.
MIR-3307-TC11
Unit: mm
Package Dimensions
Features
Compact and thin
MIR-3307-TC11 : Compact DIP, SMD type
Optimum detecting diatance : 0.8 - 1.0 mm
Wavelength : 940nm
Visible light cut-off type
NOTE:
(1).Tolerance:±0.2mm
(2). ( ) Reference dimensions
Item
Lead Material
Mold Material
Content
The Cu System
Inner: Epoxy Resin
Outer:PPA
Absolute Maximum Ratings
@ T
A
=25
o
C
Parameter
Continuous Forward Current
INPUT
Reverse Voltage
Power Dissipation
Collector-emitter breakdown voltage
Symbol
I
F
V
R
P
ad
V
(BR)CEO
V
(BR)ECO
P
C
P
TOT
T
opr
T
stg
Minimum Rating Maximum Rating
-
-
-
30
5
-
-
50
5
80
-
-
75
100
-40
o
C
to + 85
o
C
-40
o
C
to + 85
o
C
Unit
mA
V
mW
V
V
mW
mW
OUTPUT
Emitter-Collector breakdown voltage
Collector power dissipation
Total power dissipation
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature (minimum 1.6mm from body) at 300
o
C within 2 sec
Unity Opto Technology Co., Ltd.
11/06/2003
UOT [ UNITY OPTO TECHNOLOGY ]
