SUBMINIATURE
PHOTOINTERRUPTER
Description
The MIT-4A11B consists of a Gallium Arsenide in-
frared emitting diode and a NPN silicon phototran-
sistor , double-layer mold plastic package. It is a
transmissive subminiature photointerrupter.
MIT-4A11B
Package Dimensions
Unit : mm
2
C
E
3
1
A
`
4.2
C
4
Features
l
l
l
l
Ultra-compact
PWB mounting type package
High sensing accuracy ( Slit width: 0.3mm )
Gap between light emitter and detector: 1.2mm
4.2
1.5
(1.0)
(0.3)
1.2
2.8
3.9
5.2
Applications
l
l
l
Cameras
Floppy disk drives
Printer
1.5±0.1Hold ±
4-0.5
4-0.15
4.0
MIN.
*2.54
*3.2
NOTE
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Burr's dimension : 0.15MAX
3.( ) : Reference dimensions
4. The dimensions indicated by * refer to those measured
from the lead base
@T
A
=25
℃
Symbol
I
F
V
R
P
ad
V
(BR)CEO
V
(BR)ECO
P
C
P
TOT
T
opr
T
stg
T
sol
Maximum Rating
50
5
75
30
5
75
100
-25℃ to + 85℃
-40℃ to + 100℃
260
o
C for 3 seconds
Unit
mA
V
mW
V
V
mW
mW
Absolute Maximum Ratings
Parameter
Continuous Forward Current
INPUT Reverse Voltage
Power Dissipation
Collector-emitter breakdown voltage
OUTPUT Emitter-Collector breakdown voltage
Collector power dissipation
Total power dissipation
Operating Temperature Range
Storage Temperature Range
Soldering temperature
Unity Opto Technology Co., Ltd.
01/30/2002
UOT [ UNITY OPTO TECHNOLOGY ]
