UTC 2SC3835
NPN EPITAXIAL SILICON TRANSISTOR
SWITCH NPN TRANSISTOR
APLLICATION
*Humidifier,DC-DC converter,and general purpose.
1
TO-3PN
1: BASE
2:COLLECTOR
3: EMITTER
ABSOLUTE MAXIMUM RATINGS
(Ta=25°C)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Collector Current (PULSE)
Collector Power Dissipation( Tc=25°C )
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
B
Ic
Pc
T
j
T
STG
RATING
200
120
8
3
7
14
70
150
-55 ~ +150
UNIT
V
V
V
A
A
A
W
°C
°C
ELECTRICAL CHARACTERISTICS
(Ta=25°C,unless otherwise specified)
PARAMETER
Collector Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Turn-on Time
Storage Time
Fall Time
SYMBOL
BV
CEO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
Cob
ton
tstg
tf
TEST CONDITIONS
Ic= 50mA
V
CB
=200V, I
E
=0
V
EB
= 8V, Ic =0
V
CE
= 4V,Ic= 3A
Ic=3A ,I
B
=0.3A
Ic=3A ,I
B
=0.3A
V
CE
=12V,I
E
=-0.5mA
V
CB
= 10V, I
E
= 0 A,f=1MHz
See specified Test Circuit
MIN
120
TYP
MAX
100
100
220
0.5
1.2
UNIT
V
μA
μA
V
V
MHz
pF
µs
µs
µs
70
30
110
0.5
3.0
0.5
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R214-002,A
UTC-IC [ UNISONIC TECHNOLOGIES ]
