UTC BCP68
NPN EPITAXIAL SILICON TRANSISTOR
NPN MEDIUM POWER
TRANSISTOR
FEATURES
* High current (max. 1 A)
* Low voltage (max. 20 V)
* Complementary to UTC BCP69
APPLICATIONS
* General purpose switching and amplification under high
current conditions.
1
SOT-223
1: BASE
2: COLLECTOR
3: EMITTER
ABSOLUTE MAXIMUM RATINGS
(Ta = 25℃)
PARAMETER
Collector-Base Voltage (Open Emitter)
Collector-Emitter Voltage(Open Base)
Emitter-Base Voltage(Open Collector)
Collector Current (DC)
Peak Collector Current
Peak Base Current
Total Power Dissipation, Ta
≤
25℃
Operating Ambient Temperature
Junction Temperature
Storage Temperature
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Ta
T
j
T
stg
RATINGS
32
20
5
1
2
200
1.37
-65 ~ +150
150
-65 ~ +150
UNIT
V
V
V
A
A
mA
W
℃
℃
℃
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL TEST CONDITIONS
RATINGS
UNIT
Thermal Resistance From Junction To Ambient
R
th j-a
Note 1
91
K/W
Thermal Resistance From Junction To Soldering Point
R
th j-s
10
K/W
Note 1: Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
UTC
UNISONIC TECHNOLOGIES CO. LTD
1
QW-R207-008,B
UTC-IC [ UNISONIC TECHNOLOGIES ]
