PZTA14
ABSOLUTE MAXIMUM RATING
(T
A
=25°C)
NPN SILICON TRANSISTOR
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
30
V
Collector-Emitter Voltage
V
CES
30
V
Emitter-Base Voltage
V
EBO
10
V
Collector Power Dissipation
P
C
1
W
Collector Current
I
C
500
mA
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
SYMBOL
Collector-Emitter Breakdown Voltage
BV
CES
Collector Cut-Off Current
I
CBO
Emitter Cut-Off Current
I
EBO
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
V
CE(SAT)
Base-Emitter on Voltage
V
BE(ON)
Current Gain Bandwidth Product
f
T
Pulse test: Pulse Width<300μs, Duty Cycle=2%
TEST CONDITIONS
I
C
=100μA, I
B
=0
V
CB
=30V, I
E
=0
V
EB
=10V, I
C
=0
V
CE
=5V, I
C
=100mA
I
C
=100mA, I
B
=0.1mA
V
CE
=5V, I
C
=100mA
V
CE
=5V, I
C
=10mA, f=100MHz
MIN
30
TYP
MAX
100
100
20000
1.5
2.0
125
V
V
MHz
UNIT
V
nA
nA
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 2
QW-R207-004, D