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10-F0122PA150SC-P990F09 参数 Datasheet PDF下载

10-F0122PA150SC-P990F09图片预览
型号: 10-F0122PA150SC-P990F09
PDF下载: 下载PDF文件 查看货源
内容描述: [Insulated Gate Bipolar Transistor]
分类和应用:
文件页数/大小: 15 页 / 379 K
品牌: VINCOTECH [ VINCOTECH ]
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FZ12 / F0122PA150SC
preliminary datasheet
Output Inverter
Figure 9
Typical switching times as a
function of collector current
t = f(I
C
)
1
t (
μ
s)
Output inverter IGBT
Figure 10
Typical switching times as a
function of gate resistor
t = f(R
G
)
1
t (
μ
s)
Output inverter IGBT
t
doff
t
don
t
doff
t
don
t
f
0,1
t
f
0,1
t
r
t
r
0,01
0,01
0,001
0
50
100
150
200
250
I
C
(A)
300
0,001
0
2
4
6
8
R
G
(
Ω
)
10
With an inductive load at
T
j
=
150
°C
V
CE
=
600
V
V
GE
=
±15
V
R
gon
=
2
R
goff
=
2
With an inductive load at
T
j
=
150
°C
V
CE
=
600
V
V
GE
=
±15
V
I
C
=
150
A
Figure 11
Typical reverse recovery time as a
function of collector current
t
rr
= f(I
C
)
0,5
t
rr
(
μ
s)
Output inverter FRED
Figure 12
Typical reverse recovery time as a
function of IGBT turn on gate resistor
t
rr
= f(R
gon
)
0,5
t
rr
(
μ
s)
Output inverter FRED
t
rr
T
j
= T
jmax
-25°C
0,4
0,4
T
j
= T
jmax
-25°C
0,3
t
rr
0,3
0,2
0,2
T
j
= 25°C
0,1
t
rr
0,1
T
j
= 25°C
t
rr
0
0
50
100
150
200
250
I
C
(A)
300
0
0
2
4
6
8
R
g on
(
Ω
)
10
At
T
j
=
V
CE
=
V
GE
=
R
gon
=
25/150
600
±15
2
°C
V
V
At
T
j
=
V
R
=
I
F
=
V
GE
=
25/150
600
150
±15
°C
V
A
V
copyright Vincotech
6
Revision: 1