15ETH06/15ETH06FP
Hyperfast Rectifier,
15 A FRED Pt
TM
100
I
F
= 30 A
I
F
= 15 A
80
800
I
F
= 30 A
I
F
= 15 A
1000
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
Vishay High Power Products
40
Q
rr
(nC)
V
R
= 390 V
T
J
= 125 °C
T
J
= 25 °C
1000
t
rr
(ns)
60
600
400
20
200
0
100
0
100
1000
dI
F
/dt (A/µs)
Fig. 9 - Typical Reverse Recovery Time vs. dI
F
/dt
dI
F
/dt (A/µs)
Fig. 10 - Typical Stored Charge vs. dI
F
/dt
V
R
= 200 V
0.01
Ω
L = 70 µH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 11 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 12 - Reverse Recovery Waveform and Definitions
Document Number: 93006
Revision: 01-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
VISHAY [ VISHAY TELEFUNKEN ]
