1N4728A...1N4761A
Vishay Telefunken
Silicon Power Z–Diodes
Features
D
D
D
D
Very sharp reverse characteristic
Very high stability
Low reverse current level
V
Z
–tolerance
±
5%
Applications
94 9369
Voltage stabilization
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
T
amb
50
°
C
x
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
1
P
V
/V
Z
200
–65...+200
Unit
W
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=9.5mm (3/8”), T
L
=constant
Symbol
R
thJA
Value
100
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.2
Unit
V
Document Number 85587
Rev. 2, 01-Apr-99
www.vishay.de
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FaxBack +1-408-970-5600
1 (4)
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