1N5820 thru 1N5822
Vishay General Semiconductor
1000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
100
Transient Thermal Impedance (°C/W)
100
Junction Capacitance (pF)
10
100
1
10
0.1
1
10
0.1
0
0.1
1
10
100
Reverse
Voltage
(V)
t - Pulse Duration (s)
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-201AD
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
0.052 (1.32)
0.048 (1.22)
DIA.
Document Number: 88526
Revision: 20-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
157
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