2N5196/5197/5198/5199
Vishay Siliconix
Monolithic N-Channel JFET Duals
PRODUCT SUMMARY
Part Number
2N5196
2N5197
2N5198
2N5199
V
GS(off)
(V)
–0.7 to –4
–0.7 to –4
–0.7 to –4
–0.7 to –4
V
(BR)GSS
Min (V)
–50
–50
–50
–50
g
fs
Min (mS)
1
1
1
1
I
G
Max (pA)
–15
–15
–15
–15
jV
GS1
– V
GS2
j
Max (mV)
5
5
10
15
FEATURES
D
D
D
D
D
D
Monolithic Design
High Slew Rate
Low Offset/Drift Voltage
Low Gate Leakage: 5 pA
Low Noise
High CMRR: 100 dB
BENEFITS
D
Tight Differential Match vs. Current
D
Improved Op Amp Speed, Settling Time
Accuracy
D
Minimum Input Error/Trimming Requirement
D
Insignificant Signal Loss/Error Voltage
D
High System Sensitivity
D
Minimum Error with Large Input Signal
APPLICATIONS
D
Wideband Differential Amps
D
High-Speed, Temp-Compensated,
Single-Ended Input Amps
D
High Speed Comparators
D
Impedance Converters
DESCRIPTION
The 2N5196/5197/5198/5199 JFET duals are designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with I
G
guaranteed at V
DG
= 20 V.
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
TO-71
S
1
1
D
1
6
G
2
2
5
D
2
3
G
1
Top View
4
S
2
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature (
1
/
16
” from case for 10 sec.) . . . . . . . . . . . . . . . . . . 300
_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
Power Dissipation :
Per Side
a
. . . . . . . . . . . . . . . . . . . . . . . . 250 mW
Total
b
. . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mW
Notes
a. Derate 2 mW/_C above 85_C
b. Derate 4 mW/_C above 85_C
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