2N6661/VN88AFD
Vishay Siliconix
N-Channel 80-V and 90-V (D-S) MOSFETS
PRODUCT SUMMARY
Part Number
2N6661
VN88AFD
V
(BR)DSS
Min (V)
90
80
r
DS(on)
Max (W)
4 @ V
GS
= 10 V
4 @ V
GS
= 10 V
V
GS(th)
(V)
0.8 to 2
0.8 to 2.5
I
D
(A)
0.9
1.29
FEATURES
D
D
D
D
D
Low On-Resistance: 3.6
W
Low Threshold: 1.6 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 6 ns
Low Input and Output Leakage
BENEFITS
D
D
D
D
D
Low Offset Voltage
Low-Voltage Operation
Easily Driven Without Buffer
High-Speed Circuits
Low Error Voltage
APPLICATIONS
D
Direct Logic-Level Interface: TTL/CMOS
D
Drivers: Relays, Solenoids, Lamps,
Hammers, Displays, Memories, Transistors,
etc.
D
Battery Operated Systems
D
Solid-State Relays
TO-205AD
(TO-39)
TO-220SD
(Tab-Drain)
D
S
1
Device Marking
Side View
2N6661
“S”
fllxxyy
2
3
D
“S” = Siliconix Logo
f
= Factory Code
ll
= Lot Traceability
xxyy
= Date Code
G
Device Marking
Front View
VN88AFD
“S”
xxyy
“S” = Siliconix Logo
xxyy
= Date Code
S G D
Front View
VN88AFD
S
N-Channel MOSFET
G
Top View
2N6661
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
_
Pulsed Drain Current
a
Power Dissipation
Thermal Resistance, Junction-to-Ambient
b
Thermal Resistance, Junction-to-Case
Operating Junction and Storage Temperature Range
Notes
a. Pulse width limited by maximum junction temperature.
b. This parameter not registered with JEDEC.
Document Number: 70224
S-04279—Rev. C, 16-Jul-01
www.vishay.com
T
C
= 25_C
T
C
= 100_C
T
C
= 25_C
T
C
= 100_C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJC
T
J
, T
stg
2N6661
90
"20
0.9
0.7
"3
6.25
2.5
170
VN88AFD
80
"30
1.29
0.81
"3
15
6
Unit
V
A
W
8.3
–55 to 150
_C/W
_
_C
11-1
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