VS-30CTH02PbF, VS-30CTH02FPPbF
Vishay Semiconductors
Hyperfast Rectifier, 2 x 10 A FRED Pt
®
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
TO-220AB
Base
common
cathode
2
TO-220 FULL-PAK
• Low leakage current
• Fully isolated package (V
INS
= 2500 V
RMS
)
• UL E78996 pending
• Compliant to RoHS Directive 2002/95/EC
• AEC-Q101 qualified (TO-220)
1
Anode
2
Common
cathode
3
Anode
1
Anode
2
Common
cathode
• Designed and qualified for industrial level (TO-220FP)
3
Anode
DESCRIPTION/APPLICATIONS
200 V series are the state of the art hyperfast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and hyperfast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, DC/DC converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
VS-30CTH02PbF
VS-30CTH02FPPbF
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
t
rr
typ.
T
J
max.
Diode variation
TO-220AB, TO-220FP
2 x 15 A
200 V
1.05 V
See Recovery table
175 °C
Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
per diode
Average rectified forward current
(FULL-PAK) per diode
per device
Non-repetitive peak surge current
Operating junction and storage temperatures
I
FSM
T
J
, T
Stg
T
J
= 25 °C
I
F(AV)
SYMBOL
V
RRM
T
C
= 159 °C
T
C
= 125 °C
TEST CONDITIONS
VALUES
200
15
30
200
- 65 to 175
°C
A
UNITS
V
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 15 A
I
F
= 15 A, T
J
= 125 °C
V
R
= V
R
rated
T
J
= 125 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
TYP.
-
0.92
0.78
-
5
57
8
MAX.
-
1.05
0.85
10
300
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 94014
Revision: 28-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VISHAY [ VISHAY TELEFUNKEN ]
