30ETH06S/30ETH06-1
Vishay High Power Products
Hyperfast Rectifier,
30 A FRED Pt
TM
FEATURES
30ETH06S
30ETH06-1
• Hyperfast recovery time
• Low forward voltage drop
• Low leakage current
• 125 °C operating junction temperature
Base
cathode
2
2
• Dual diode center tap
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
1
N/C
3
Anode
1
N/C
3
Anode
D
2
PAK
TO-262
PRODUCT SUMMARY
t
rr
(typical)
I
F(AV)
V
R
28 ns
30 A
600 V
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC-DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
SYMBOL
V
RRM
I
F(AV)
I
FSM
T
J
, T
Stg
T
C
= 103 °C
T
J
= 25 °C
TEST CONDITIONS
MAX.
600
30
200
- 65 to 175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 µA
I
F
= 30 A
I
F
= 30 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 600 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
600
-
-
-
-
-
-
TYP.
-
2.0
1.34
0.3
60
33
8.0
MAX.
-
2.6
1.75
50
500
-
-
µA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 93932
Revision: 08-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
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