BAS70 THRU BAS70-06
ELECTRICAL CHARACTERISTICS
Ratings for one diode at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
70
Typ.
–
Max.
–
Unit
V
Reverse Breakdown Voltage
Tested with 10 µA Pulses
V
(BR)R
Leakage Current
I
–
20
100
nA
R
Pulse Test t < 300 µs
p
at V = 50 V
R
Forward Voltage
Pulse Test t < 300 µs
p
at I = 1 mA
V
F
V
F
–
–
–
–
410
1000
mV
mV
F
at I = 15 mA
F
Capacitance
C
–
–
–
1.5
2
pF
tot
at V = 0 V, f = 1 MHz
R
Reverse Recovery Time
t
rr
–
5
ns
from I = 10 mA through I = 10 mA to I = 1 mA
F
R
R
Thermal Resistance Junction to Ambient Air
1) Device on fiberglass substrate, see layout
R
–
4301)
K/W
thJA
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.06 (1.5)
Dimensions in inches (millimeters)
.20 (5.1)
Layout for R
test
th J A
Thickness: Fiberglass 0.059 in (1.5 mm)
Copper leads 0.012 in (0.3 mm)