BAT54PbF
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
0.1 A
30 mA
Maximum forward voltage drop
V
FM (1)
10 mA
1 mA
0.1 mA
Maximum reverse leakage current
Maximum junction capacitance
Maximum voltage rate of change
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
I
RM (1)
C
T
dV/dt
V
R
= 25 V
V
R
= 30 V
V
R
= 1 V
DC
(test signal range 100 kHz to 1 MHz), T
J
= 25 °C
Rated V
R
T
J
= 25 °C
TEST CONDITIONS
VALUES
0.65
0.50
0.40
0.32
0.24
2
3
10
10 000
µA
pF
V/µs
V
UNITS
Schottky Diode, 0.2 A
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device
Note
(1)
SYMBOL
T
J (1)
, T
Stg
R
thJA
TEST CONDITIONS
VALUES
- 65 to 150
UNITS
°C
°C/W
g
Mounted on PC board FR4 with minimum pad size
500
0.008
Case style SOT-23
EYWLC
dP
tot
1
------------ < ------------- thermal runaway condition for a diode on its own heatsink
-
-
dT
J
R
thJA
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2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94271
Revision: 19-Sep-08
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