BAV17...BAV21
Vishay Telefunken
Silicon Epitaxial Planar Diodes
Applications
General purposes
94 9367
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Peak reverse voltage
g
Test Conditions
Type
BAV17
BAV18
BAV19
BAV20
BAV21
BAV17
BAV18
BAV19
BAV20
BAV21
Symbol
V
RRM
V
RRM
V
RRM
V
RRM
V
RRM
V
R
V
R
V
R
V
R
V
R
I
F
I
FSM
I
FM
T
j
T
stg
Value
25
60
120
200
250
20
50
100
150
200
250
1
625
175
–65...+175
Unit
V
V
V
V
V
V
V
V
V
V
mA
A
mA
°
C
°
C
Reverse voltage
g
Forward current
Peak forward surge current
Forward peak current
Junction temperature
Storage temperature range
t
p
=1s, T
j
=25
°
C
f=50Hz
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
l=4mm, T
L
=constant
Symbol
R
thJA
Value
350
Unit
K/W
Document Number 85543
Rev. 2, 01-Apr-99
www.vishay.de
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