BPW17N
Vishay Telefunken
Silicon NPN Phototransistor
Description
BPW17N is a silicon NPN epitaxial planar photo-
transistor in a miniature plastic case with a
±
12
°
lens.
With a lead center to center spacing of 2.54mm and a
package width of 2.4mm the devices are easily stack-
able on PC boards and assembled to arrays of
unlimited size.
Due to its waterclear epoxy the device is sensitive to
visible and near infrared radiation.
Features
D
Miniature T–
¾
clear plastic package with lens
D
Narrow viewing angle
ϕ
=
±
12
°
D
Insensitive against background light due to nar-
row aperture
94 8639
D
Suitable for 0.1” (2.54 mm) center to center spac-
ing
D
Suitable for visible and near infrared radiation
D
Compatible with IR diode CQY37N
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
CEO
V
ECO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
32
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
°
C
°
C
°
C
K/W
t
p
/T = 0.5, t
p
10 ms
T
amb
55
°
C
x
x
t
x
3s
Document Number 81516
Rev. 2, 20-May-99
www.vishay.de
•
FaxBack +1-408-970-5600
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