DG411/412/413
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Leakage Current vs. Analog Voltage
40
V+ = 15 V
V– = –15 V
V
L
= 5 V
T
A
= 25_C
r DS(on) Drain-Source On-Resistance (
W
)
–
30
20
10
I S, I D (pA)
0
–10
–20
–30
–40
–50
–60
–15
–10
–5
0
5
10
15
V
D
or V
S
— Drain or Source Voltage (V)
I
S(off)
I
D(on)
35
V+ = 15 V
V– = –15 V
V
L
= 5 V
125_C
25
85_C
20
25_C
15
–55_C
10
I
D,
I
S
Leakages vs. Temperature
30
I
D(off)
5
–15
–10
–5
0
5
10
15
V
D
– Drain Voltage (V)
Charge Injection vs. Analog Voltage
100
80
60
80
40
Q (pC)
Q (pC)
C
L
= 10 nF
20
0
C
L
= 1 nF
–20
–20
–40
–60
–15
–10
–5
0
5
10
15
V
S
– Source Voltage (V)
–40
–60
–15
60
V+ = 15 V
V– = –15 V
V
L
= 5 V
140
120
100
Charge Injection vs. Analog Voltage
V+ = 15 V
V– = –15 V
V
L
= 5 V
C
L
= 10 nF
C
L
= 1 nF
40
20
0
–10
–5
0
5
10
15
V
D
– Drain Voltage (V)
Input Switching Threshold vs. Supply Voltage
3.5
3.0
2.5
V TH (V)
2.0
6.5 V
1.5
1.0
0.5
0
(V+) 5
10
15
20
25
30
35
40
4.5 V
5.5 V
240
210
180
t ON t OFF (ns)
,
V
L
= 7.5 V
150
Switching Time vs. Temperature
V+ = 15 V
V– = –15 V
V
L
= 5 V
V
S
= 10 V
t
ON
120
t
OFF
90
60
30
0
–55 –35
–15
5
25
45
65
85
105 125
Temperature (_C)
Document Number: 70050
S-52433—Rev. D, 06-Sep-99
www.vishay.com
S
FaxBack 408-970-5600
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