DG444, DG445
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
80
R
DS(on)
- Drain-Source On-Resistance ()
70
60
- 100
50
40
30
20
10
0
- 15
- 10
-5
0
5
10
15
V
D
- Drain Voltage (V)
0 °C
- 40 °C
- 40
- 20
0
100
1K
10K
100K
1M
10M
V+ = 15 V
V- = - 15 V
Ref. 10 dBm
85 °C
25 °C
(dB)
- 80
- 60
Off Isolation
V+ = 15 V
V- = - 15 V
- 140
- 120
Crosstalk
f - Frequency (Hz)
R
DS(on)
vs. V
D
and Temperature
50
40
30
20
Q (pC)
10
0
- 10
- 20
- 30
- 10
-5
0
V
S
- Source Voltage (V)
5
10
0
0
V+ = 12 V
V- = 0 V
3
V
TH
(V)
V+ = 15 V
V- = - 15 V
C
L
= 1 nF
4
Crosstak and Off Isolation vs. Frequency
2
V
L
= 7 V
1
V
L
= 5 V
4
8
12
16
20
V
SUPPLY
(V)
Charge Injection vs. Source Voltage
20
I
S(off)
, I
D(off)
0
0
10
Switching Threshold vs. Supply Voltage
I
S(off)
, I
D(off)
- 20
I
S
, I
D
(pA)
I
D(on)
- 40
I
S
, I
D
(pA)
- 10
I
S(on)
+ I
D(on)
- 20
V+ = 12 V
V- = 0 V
For I
D
, V
S
= 0 V
For I
S
, V
D
= 0 V
- 60
V+ = 15 V
V- = - 15 V
For I
(off)
, V
D
= - V
S
- 30
- 80
- 100
- 15
- 10
-5
0
5
10
15
- 40
0
2
4
6
8
10
12
V
D
or V
S
- Drain or Source Voltage (V)
V
D
or V
S
- Drain or Source Voltage (V)
Source/Drain Leakage Currents
Source/Drain Leakage Currents
(Single 12-V Supply)
www.vishay.com
4
Document Number: 70054
S11-0984-Rev. G, 23-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VISHAY [ VISHAY TELEFUNKEN ]
