New Product
EGF1T
Vishay General Semiconductor
Surface Mount Glass Passivated Ultrafast Rectifier
FEATURES
• Cavity-free glass-passivated junction
®
• Ideal for automated placement
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• Avalanche surge energy capability
• Meets environmental standard MIL-S-19500
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 250 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
ted*
aten
P
* Glass-plastic encapsulation
technique is covered by patent
No. 3,996,602, brazed-lead
assembly by Patent No. 3,930,306
and lead forming by Patent No. 5,151,846
DO-214BA (GF1)
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
E
AS
T
J
max.
1.0 A
1300 V
20 A
75 ns
15 mJ
150 °C
For use in high voltage rectification of photoflash
application.
MECHANICAL DATA
Case:
DO-214BA, molded plastic over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking
Maximum average forward rectified current
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at T
A
= 25 °C, I
AS
= 1 A, L = 30 mH
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
E
AS
T
J
, T
STG
SYMBOL
EGF1T
ET
1300
910
1300
1.0
20
15
- 55 to + 150
V
V
V
A
A
mJ
°C
UNIT
Document Number: 88904
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
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