New Product
ES1A thru ES1D
Vishay General Semiconductor
100
14
12
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50mVp-p
Instantaneous Forward Current (A)
10
T
J
= 150 °C
T
J
= 125 °C
Junction Capacitance (pF)
1.2
1.4
10
8
6
4
2
0
1
T
J
= 100 °C
0.1
T
J
= 25 °C
0.01
0.2
0.4
0.6
0.8
1.0
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1000
100
Fig. 5 - Typical Junction Capacitance
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Leakage
Current (µA)
T
J
= 150 °C
100
T
J
= 125 °C
T
J
= 100 °C
10
Mounted on 0.2" x 0.2" (5 mm x 7 mm)
Copper Pad Areas
10
1
T
J
= 25 °C
0.1
0
20
40
60
80
100
1
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 89273
Revision: 19-Apr-11
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www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000