ESH1B, ESH1C & ESH1D
Vishay General Semiconductor
100
T
J
= 175 °C
100
T
J
= 150 °C
Instantaneous Reverse Leakage
Current (µA)
10
T
J
= 125 °C
T
J
= 100 °C
0.1
1
Junction Capacitance (pF)
80
100
10
0.01
T
J
= 125 °C
0.001
20
1
40
60
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
Reverse
Voltage
(V)
Figure 3. Typical Reverse Leakage Characteristics
Figure 5. Typical Junction Capacitance
100
100
T
J
= 125 °C
10
T
J
= 150 °C
1
T
J
= 175 °C
T
J
= 25 °C
Transient Thermal Impedance (°C/W)
1.4
Instantaneous Forward Current (A)
10
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1
0.01
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Figure 4. Typical Instantaneous Forward Characteristics
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208
(5.28) REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number: 88890
Revision: 27-Aug-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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