GF1A thru GF1M
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current Derating Curve
30
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Rectified Current (A)
60 H
Z
Resistive or Inductive Load
25
1.0
20
15
10
5
0.5
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0
100
110
120
130
140
150
160
175
0
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
I
F
— Instantaneous Forward Current (A)
10
10
Fig. 4 – Typical Reverse Characteristics
I
R
— Instantaneous Reverse
Leakage Current (mA)
1
1
T
J
= 100
°
C
0.1
Pulse Width = 300µs
1% Duty Cycle
T
J
= 25
°
C
0.6
0.8
1.0
1.2
1.4
1.6
0.1
T
J
= 25
°
C
0.01
0
20
40
60
80
100
0.01
0.4
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
30
Fig. 6 – Typical Transient
Thermal Impedance
100
10
Transient Thermal Impedance (°C/W)
pF — Junction Capacitance
T
J
= 25
°
C
f = 1.0 MH
Z
V
sig
= 50mVp-p
Mounted on
0.2 x 0.27" (5.0 x 7.0mm)
Copper Pad Areas
10
1
1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
www.vishay.com
2
t — Pulse Duration (sec.)
Document Number 88617
08-Jul-02
VISHAY [ VISHAY TELEFUNKEN ]
