HFA15TB60/HFA15TB60-1
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 15 A
FEATURES
HFA15TB60
HFA15TB60-1
•
•
•
•
•
•
Ultrafast recovery
Ultrasoft recovery
Very low I
RRM
Very low Q
rr
Specified at operating conditions
Designed and qualified for industrial level
BENEFITS
Base
cathode
2
2
•
•
•
•
•
3
Anode
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
1
Cathode
3
Anode
1
N/C
DESCRIPTION
HFA15TB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 15 A continuous current, the
HFA15TB60 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the t
b
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA15TB60 is ideally suited
for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
TO-220AC
TO-262
PRODUCT SUMMARY
V
R
V
F
at 15 A at 25 °C
I
F(AV)
t
rr
(typical)
T
J
(maximum)
Q
rr
dI
(rec)M
/dt
600 V
1.7 V
15 A
19 ns
150 °C
84 nC
188 A/µs
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
15
150
60
74
29
- 55 to + 150
W
°C
A
UNITS
V
Document Number: 93063
Revision: 30-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
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