HFA25TB60
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 25 A
FEATURES
•
•
•
•
•
•
Base
cathode
Ultrafast recovery
Ultrasoft recovery
Very low I
RRM
Very low Q
rr
Specified at operating conditions
Designed and qualified for industrial level
BENEFITS
•
•
•
•
•
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
1
Cathode
3
Anode
DESCRIPTION
HFA25TB60 is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 600 V and 25 A continuous current, the
HFA25TB60 is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
®
product line features
extremely low values of peak recovery current (I
RRM
) and
does not exhibit any tendency to “snap-off” during the
t
b
portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25TB60 is ideally suited
for applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
TO-220AC
PRODUCT SUMMARY
V
R
V
F
at 25 A at 25 °C
I
F(AV)
t
rr
(typical)
T
J
(maximum)
Q
rr
(typical)
dI
(rec)M
/dt (typical)
I
RRM
600 V
1.7 V
25 A
23 ns
150 °C
112 nC
250 A/µs
10 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
T
C
= 25 °C
T
C
= 100 °C
T
C
= 100 °C
TEST CONDITIONS
VALUES
600
25
225
100
125
50
- 55 to + 150
W
°C
A
UNITS
V
Document Number: 93085
Revision: 30-Jul-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
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