IRFBE30, SiHFBE30
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
62
-
1.0
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 20 V
V
DS
= 800 V, V
GS
= 0 V
V
DS
= 640 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 2.5 A
b
A
b
V
DS
= 100 V, I
D
= 2.5
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
I
D
= 4.1 A, V
DS
= 400 V,
see fig. 6 and 13
b
800
-
2.0
-
-
-
-
2.5
-
0.9
-
-
-
-
-
-
-
-
4.0
± 100
100
500
3.0
-
V
V/°C
V
nA
µA
Ω
S
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
V
GS
= 10 V
-
-
-
-
-
-
-
1300
310
190
-
-
-
12
33
82
30
4.5
7.5
-
-
-
78
9.6
45
-
-
-
-
-
nH
-
ns
nC
pF
V
DD
= 400 V, I
D
= 4.1 A
R
G
= 12
Ω,
R
D
= 95
Ω,
see fig. 10
b
-
-
-
Between lead,
6 mm (0.25") from
package and center of
die contact
D
-
-
G
S
-
-
-
-
-
-
-
-
480
1.8
4.1
A
16
1.8
720
2.7
V
ns
µC
G
S
T
J
= 25 °C, I
S
= 4.1 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 4.1 A, dI/dt = 100 A/µs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
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Document Number: 91118
S-81262-Rev. A, 07-Jul-08
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