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IRFL014 参数 Datasheet PDF下载

IRFL014图片预览
型号: IRFL014
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用:
文件页数/大小: 9 页 / 1003 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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IRFL014, SiHFL014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
11
3.1
5.8
Single
D
FEATURES
60
0.20
Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
SOT-223
D
S
S
N-Channel MOSFET
G
D
G
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performace
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
SnPb
Note
a. See device orientation.
SOT-223
SiHFL014-GE3
IRFL014PbF
SiHFL014-E3
IRFL014
SiHFL014
SOT-223
SiHFL014TR-GE3
a
IRFL014TRPbF
a
SiHFL014T-E3
a
IRFL014TR
a
SiHFL014T
a
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
LIMIT
60
± 20
2.7
1.7
22
0.025
0.017
100
3.1
2.0
4.5
- 55 to + 150
300
d
UNIT
V
A
I
DM
Pulsed Drain
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
E
AS
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
T
C
= 25 °C
P
D
e
T
A
= 25 °C
Maximum Power Dissipation (PCB Mount)
dV/dt
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
T
J
, T
stg
Soldering Recommendations (Peak Temperature)
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 16 mH, R
g
= 25
Ω,
I
AS
= 2.7 A (see fig. 12).
c. I
SD
10 A, dI/dt
90 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91191
S10-1257-Rev. C, 31-May-10
W/°C
mJ
W
V/ns
°C
www.vishay.com
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