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IRFL210TRPBF 参数 Datasheet PDF下载

IRFL210TRPBF图片预览
型号: IRFL210TRPBF
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET [Power MOSFET]
分类和应用: 晶体晶体管开关脉冲光电二极管局域网
文件页数/大小: 8 页 / 1069 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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IRFL210, SiHFL210
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
8.2
1.8
4.5
Single
D
FEATURES
200
1.5
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
SOT-223
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performace due to
an enlarged tab for heatsinking. Power dissipation of greater
than 1.25 W is possible in a typical surface mount
application.
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SOT-223
IRFL210PbF
SiHFL210-E3
IRFL210
SiHFL210
SOT-223
IRFL210TRPbF
a
SiHFL210T-E3
a
IRFL210TR
a
SiHFL210T
a
SnPb
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
* Pb containing terminations are not RoHS compliant, exemptions may apply
E
AS
I
AR
E
AR
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
200
± 20
0.96
0.6
7.7
0.025
0.017
50
0.96
0.31
W/°C
mJ
A
mJ
A
UNIT
V
Document Number: 91193
S-81377-Rev. A, 30-Jun-08
www.vishay.com
1