IRLL014, SiHLL014
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 5.0 V
8.4
3.5
6.0
Single
D
FEATURES
60
0.20
•
•
•
•
•
•
•
•
Surface Mount
Available in Tape and Reel
Dynamic dV/dt Rating
Logic-Level Gate Drive
R
DS(on)
Specified at V
GS
= 4 V and 5 V
Fast Switching
Ease of Paralleling
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DESCRIPTION
SOT-223
G
S
N-Channel
MOSFET
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performace due to
an enlarged tab for heatsinking. Power dissipation of greater
than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
SOT-223
IRLL014PbF
SiHLL014-E3
IRLL014
SiHLL014
SOT-223
IRLL014TRPbF
a
SiHLL014T-E3
a
IRLL014TR
a
SiHLL014T
a
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
60
± 10
2.7
1.7
22
0.025
0.017
100
2.7
0.31
3.1
2.0
4.5
- 55 to + 150
300
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 16 mH, R
G
= 25
Ω,
I
AS
= 2.7 A (see fig. 12).
c. I
SD
≤
10 A, dI/dt
≤
90 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91319
S-81392-Rev. A, 07-Jul-08
www.vishay.com
1
VISHAY [ VISHAY TELEFUNKEN ]
