IRLR110, IRLU110, SiHLR110, SiHLU110
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 5.0 V
6.1
2.0
3.3
Single
D
FEATURES
100
0.54
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRLR110/SiHLR110)
• Straight Lead (IRLU110/SiHLU110)
• Available in Tape and Reel
• Logic-Level Gate Drive
• R
DS(on)
Specified at V
GS
= 4 V and 5 V
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK
(TO-252)
IPAK
(TO-251)
G
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRLU/SiHLU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
Note
a. See device orientation.
DPAK (TO-252)
IRLR110PbF
SiHLR110-E3
IRLR110
SiHLR110
DPAK (TO-252)
IRLR110TRLPbF
a
SiHLR110TL-E3
a
IRLR110TRL
a
SiHLR110TL
a
DPAK (TO-252)
-
-
IRLR110TR
a
SiHLR110T
a
IPAK (TO-251)
IRLU110PbF
SiHLU110-E3
IRLU110
SiHLU110
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Linear Derating Factor (PCB Mount)
e
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Current
a
V
GS
at 5.0 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
100
± 10
4.3
2.7
17
0.20
0.020
100
4.3
2.5
25
2.5
5.5
- 55 to + 150
260
d
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 8.1 mH, R
G
= 25
Ω,
I
AS
= 4.3 A (see fig. 12).
c. I
SD
≤
5.6 A, dI/dt
≤
140 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91323
S-81304-Rev. A, 16-Jun-08
www.vishay.com
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