J/SST108 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
20
r
DS(on)
– Drain-Source On-Resistance (
Ω )
1000
I
DSS
@ V
DS
= 15 V, V
GS
= 0 V
16
800
r
DS(on)
– Drain-Source On-Resistance (
Ω )
50
I
DSS
On-Resistance vs. Drain Current
T
A
= 25_C
r
DS
@ I
D
= 10 mA, V
GS
= 0 V
– Saturation Drain Current (mA)
40
V
GS(off)
= –2 V
30
12
r
DS
600
8
I
DSS
400
20
–4 V
10
–8 V
0
1
10
I
D
– Drain Current (mA)
100
4
200
0
0
–2
–4
–6
–8
–10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
On-Resistance vs. Temperature
40
r
DS(on)
– Drain-Source On-Resistance (
Ω )
I
D
= 10 mA
r
DS
changes X 0.7%/_C
32
– Drain Current (mA)
V
GS(off)
= –2 V
24
80
100
Output Characteristics
V
GS(off)
= –2 V
60
V
GS
= 0 V
–0.2 V
40
–0.4 V
20
–0.6 V
–0.8 V
16
–4 V
8
–8 V
0
–55
–35
–15
5
25
45
65
85
105
125
I
D
0
0
2
4
6
8
10
T
A
– Temperature (_C)
V
DS
– Drain-Source Voltage (V)
Turn-On Switching
5
t
r
approximately independent of I
D
V
DD
= 1.5 V, R
G
= 50
Ω
V
GS(L)
= –10 V
Switching Time (ns)
30
Turn-Off Switching
t
d(off)
independent
of device V
GS(off)
V
DD
= 1.5 V, V
GS(L)
= –10 V
24
t
f
18
V
GS
(
off)
= –2 V
4
Switchng Time (ns)
3
t
d(on)
@ I
D
= 10 mA
t
d(on)
@ I
D
= 25 mA
2
12
V
GS(off)
= –8 V
1
t
r
6
t
d(off)
0
0
–2
–4
–6
–8
–10
V
GS(off)
– Gate-Source Cutoff Voltage (V)
0
0
5
10
15
20
25
I
D
– Drain Current (mA)
Document Number: 70231
S-04028—Rev. E, 04-Jun-01
www.vishay.com
7-3
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