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MBR3045CT 参数 Datasheet PDF下载

MBR3045CT图片预览
型号: MBR3045CT
PDF下载: 下载PDF文件 查看货源
内容描述: 双共阴极肖特基整流器 [Dual Common-Cathode Schottky Rectifier]
分类和应用:
文件页数/大小: 5 页 / 499 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
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New Product
MBR(F,B)3035CT & MBR(F,B)3045CT
Vishay General Semiconductor
Dual Common-Cathode Schottky Rectifier
TO-220AB
ITO-220AB
FEATURES
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
MBR3035CT
MBR3045CT
PIN 1
PIN 3
PIN 2
CASE
2
1
3
MBRF3035CT
MBRF3045CT
PIN 1
PIN 3
1
2
3
PIN 2
TO-263AB
K
2
1
MBRB3035CT
MBRB3045CT
PIN 1
PIN 2
K
HEATSINK
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
15 A x 2
35 V, 45 V
200 A
0.60 V
150 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dV/dt
T
J
T
STG
V
AC
MBR3035CT
35
35
35
30
15
200
2.0
10 000
- 65 to + 150
- 65 to + 175
1500
MBR3045CT
45
45
45
UNIT
V
V
V
A
A
A
V/µs
°C
°C
V
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
Peak repetitive reverse current per diode at t
p
= 2 µs, 1 kHz
Voltage rate of change (rated V
R
)
Operating junction temperature range
Storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Document Number: 88677
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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