MBR4035PT thru MBR4060PT
Vishay General Semiconductor
100
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Forward Current (A)
10
T
J
= 150 °C
Pulse
Width
= 300
µs
1
%
Duty Cycle
1
T
J
= 25 °C
Junction Capacitance (pF)
1000
0.1
MBR4035PT - MBR4045PT
MBR4050PT & MBR4060PT
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
MBR4035PT - MBR4045PT
MBR4050PT & MBR4060PT
100
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
100
100
10
T
J
= 125 °C
1
T
J
= 75 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
MBR4035PT - MBR4045PT
MBR4050PT & MBR4060PT
10
0.1
T
J
= 25 °C
0.01
1
0.001
0
20
40
60
80
100
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-247AD (TO-3P)
0.245 (6.2)
0.225 (5.7)
0.645 (16.4)
0.625 (15.9)
0.323 (8.2)
0.313 (7.9)
0.203 (5.16)
0.193 (4.90)
30°
0.170
(4.3)
0.840 (21.3)
0.820 (20.8)
0.142 (3.6)
0.138 (3.5)
10° TYP.
Both Sides
0.078 (1.98) REF.
10
1
2
3
0.086 (2.18)
0.076 (1.93)
0.127 (3.22)
0.118 (3.0)
0.108 (2.7)
1° REF.
Both Sides
0.160 (4.1)
0.140 (3.5)
0.795 (20.2)
0.775 (19.6)
0.117 (2.97)
0.225 (5.7)
0.205 (5.2)
PIN 1
PIN 3
0.048 (1.22)
0.044 (1.12)
0.030 (0.76)
0.020 (0.51)
PIN 2
CASE
Document Number: 88679
Revision: 25-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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