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MMBT3904 参数 Datasheet PDF下载

MMBT3904图片预览
型号: MMBT3904
PDF下载: 下载PDF文件 查看货源
内容描述: 小信号晶体管( NPN ) [Small Signal Transistors (NPN)]
分类和应用: 晶体晶体管开关光电二极管
文件页数/大小: 3 页 / 139 K
品牌: VISHAY [ VISHAY TELEFUNKEN ]
 浏览型号MMBT3904的Datasheet PDF文件第1页浏览型号MMBT3904的Datasheet PDF文件第3页  
MMBT3904
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
SYMBOL
MIN.
MAX.
UNIT
Collector-Base Breakdown Voltage
at I
C
= 10
mA,
I
E
= 0
Collector-Emitter Breakdown Voltage
at I
C
= 1 mA, I
B
= 0
Emitter-Base Breakdown Voltage
at I
E
= 10
mA,
I
C
= 0
Collector Saturation Voltage
at I
C
= 10 mA, I
B
= 1 mA
at I
C
= 50 mA, I
B
= 5 mA
Base Saturation Voltage
at I
C
= 10 mA, I
B
= 1 mA
at I
C
= 50 mA, I
B
= 5 mA
Collector-Emitter Cutoff Current
V
EB
= 3 V, V
CE
= 30 V
Emitter-Base Cutoff Current
V
EB
= 3 V, V
CE
= 30 V
DC Current Gain
at V
CE
= 1 V, I
C
= 0.1 mA
at V
CE
= 1 V, I
C
= 1 mA
at V
CE
= 1 V, I
C
= 10 mA
at V
CE
= 1 V, I
C
= 50 mA
at V
CE
= 1 V, I
C
= 100 mA
Input Impedance
at V
CE
= 10 V, I
C
= 1 mA, f = 1 kHz
Gain-Bandwidth Product
at V
CE
= 20 V, I
C
= 10 mA, f = 100 MHz
Collector-Base Capacitance
at V
CB
= 5 V, f = 100 kHz
Emitter-Base Capacitance
at V
EB
= 0.5 V, f = 100 kHz
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
V
CEsat
V
CEsat
V
BEsat
V
BEsat
I
CEV
I
EBV
h
FE
h
FE
h
FE
h
FE
h
FE
h
ie
f
T
C
CBO
C
EBO
60
40
6.0
Ð
Ð
Ð
Ð
Ð
Ð
40
70
100
60
30
1
300
Ð
Ð
Ð
Ð
Ð
0.2
0.3
0.85
0.95
50
50
Ð
Ð
300
Ð
Ð
10
Ð
4
8
V
V
V
V
V
V
V
nA
nA
Ð
Ð
Ð
Ð
Ð
kW
MHz
pF
pF