RGF1A thru RGF1M
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 – Forward Current
Derating Curve
30
Fig. 2 – Maximum Non-Repetitive
Peak Forward Surge Current
Peak Forward Surge Current (A)
25
20
15
10
5
0
T
J
= T
J
max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Rectified Current (A)
1
P.C.B. Mounted on
0.2 x 0.2" (5.0 x 5.0mm)
Copper Pad Areas
0.5
60 H
Z
Resistive or
Inductive Load
0
100
110
120
130
140
150
160
175
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
10
10
Fig. 4 – Typical Reverse
Characteristics
Instantaneous Reverse Current (µA)
Instantaneous Forward Current (A)
T
J
= 125°C
1
T
J
= 100°C
1
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
0.1
0.1
T
J
= 25°C
0.01
0.4
0.01
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance
100
100
Fig. 6 – Typical Transient
Thermal Impedance
Transient Thermal Impedance (°CW)
Mounted on
0.2 x 0.2" (5. x 7mm)
Copper Pad Areas
10
Junction Capacitance (pF)
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
10
1
1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
www.vishay.com
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Document Number 88697
08-Feb-02
VISHAY [ VISHAY TELEFUNKEN ]
