Not for new design, this product will be obsoleted soon
S852T / S852TW
Vishay Semiconductors
Silicon NPN Planar RF Transistor
1
Features
•
•
•
•
•
•
•
Low supply voltage
Low current consumption
e3
50
Ω
input impedance at 945 MHz
Low noise figure
High power gain
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
SOT-23
2
1
3
SOT-323
2
3
Electrostatic sensitive device.
Observe precautions for handling.
19239
Applications
For low noise and high gain broadband amplifiers at
collector currents from 0.2 mA to 5 mA.
Mechanical Data
Typ:
S852T
Case:
SOT-23 Plastic case
Weight:
approx. 8.0 mg
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Typ:
S852TW
Case:
SOT-323 Plastic case
Weight:
approx. 6.0 mg
Pinning:
1 = Collector, 2 = Base, 3 = Emitter
Parts Table
Part
S852T
S852TW
852
W52
Marking
SOT-23
SOT-323
Package
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
T
amb
≤
125 °C
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
T
stg
Value
12
6
2
8
30
150
- 65 to + 150
Unit
V
V
V
mA
mW
°C
°C
Document Number 85052
Rev. 1.5, 08-Sep-08
www.vishay.com
1
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