SFH690ABT/ AT/ BT/ CT
Vishay Semiconductors
Output
Parameter
Test condition
Symbol
VCE
Value
70
Unit
V
Collector-emitter voltage
Emitter-collector voltage
Collector current
VEC
IC
7.0
50
V
mA
mA
mW
tp ≤ 1.0 ms
IC
100
150
Power dissipation
Pdiss
Coupler
Parameter
Test condition
Symbol
VISO
Value
3750
Unit
Isolation test voltage between
emitter and detector (1.0 s)
VRMS
Creepage
Clearance
≥ 5.33
≥ 5.08
≥ 0.4
mm
mm
mm
Insulation thickness between
emitter and detector
Comparative tracking index per
DIN IEC 112/VDEO 0303, part 1
≥ 175
≥ 1012
≥ 1011
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
RIO
Tstg
Tamb
Tj
Ω
Ω
V
IO = 500 V, Tamb = 100 °C
Storage temperature range
Ambient temperature range
Junction temperature
- 55 to + 150
°C
°C
°C
°C
- 55 to + 100
100
Soldering temperature
max. 10 s Dip soldering distance
to seating plane
Tsld
260
≥1.5 mm
200
150
Phototransistor
100
50
0
Diode
25
0
50
75
100 125 150
T
amb
– Ambient Temperature ( qC )
18484
Figure 1. Permissible Power Dissipation vs. Ambient Temperature
www.vishay.com
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Document Number 83686
Rev. 1.5, 20-Apr-04
VISHAY [ VISHAY ]
