Si1300BDL
New Product
Vishay Siliconix
N-Channel 20-V (D-S) MOSFET
FEATURES
I
D
(A)
a
0.4
0.35
PRODUCT SUMMARY
V
DS
(V)
20
r
DS(on)
(W)
0.85 at V
GS
= 4.5 V
1.08 at V
GS
= 2.5 V
Q
g
(Typ)
335
D
TrenchFETr Power MOSFET
D
100 % R
g
Tested
RoHS
COMPLIANT
SC-70 (3-LEADS)
D
G
1
Marking Code
KE
XX
YY
Lot Traceability
and Date Code
Part # Code
Top View
Ordering Information: Si1300BDL–T1–E3
S
N-Channel MOSFET
3
D
G
S
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
_C
UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25
_C
Continuous Drain Current (T
J
= 150
_C)
T
C
= 70
_C
T
A
= 25
_C
T
A
= 70
_C
Pulsed Drain Current
Continuous Source-Drain Diode Current
Source Drain
T
C
= 25
_C
T
A
= 25
_C
T
C
= 25
_C
Maximum Power Dissipation
T
C
= 70
_C
T
A
= 25
_C
T
A
= 70
_C
Operating Junction and Storage Temperature Range
T
J
, T
stg
P
D
I
DM
I
S
I
D
Symbol
V
DS
V
GS
Limit
20
"8
0.4
0.32
0.37
b, c
0.30
b, c
0.5
0.18
0.14
b, c
0.2
0.14
0.19
0.12
b, c
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
Notes:
a. Based on T
C
= 25
_C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 5 sec
d. Maximum under steady state conditions is 360
_C/W.
Document Number: 73557
S–52388—Rev. A, 21–Nov–05
www.vishay.com
t
p
5 sec
Steady State
Symbol
R
thJA
R
thJF
Typical
540
450
Maximum
670
570
Unit
_C/W
1
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