Si3443DV
Vishay Siliconix
P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.065 @ V
GS
= –4.5 V
–20
20
0.090 @ V
GS
= –2.7 V
0.100 @ V
GS
= –2.5 V
I
D
(A)
"4.4
"3.7
"3.5
(4) S
TSOP-6
Top View
1
6
(3) G
3 mm
2
5
3
4
(1, 2, 5, 6) D
P-Channel MOSFET
2.85 mm
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
I
D
T
A
= 70_C
I
DM
I
S
P
D
T
J
, T
stg
"3.5
"20
–1.7
2.0
W
1.3
–55 to 150
_C
A
Symbol
V
DS
V
GS
Limit
–20
"12
"4.4
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Notes
a. Surface Mounted on FR4 Board, t
v
5 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70713
S-54948—Rev. B, 29-Sep-97
www.vishay.com
S
FaxBack 408-970-5600
Symbol
R
thJA
Limit
62.5
Unit
_C/W
2-1
VISHAY [ VISHAY TELEFUNKEN ]
