Si4368DY
New Product
Vishay Siliconix
N-Channel Reduced Q
g
, Fast Switching WFETt
PRODUCT SUMMARY
V
DS
(V)
30
FEATURES
I
D
(A)
25
22
r
DS(on)
(W)
0.0032 @ V
GS
= 10 V
0.0036 @ V
GS
= 4.5 V
D
Extremely Low Q
gd
WFET Technology for
Switching Losses Improvement
D
TrenchFETr Gen II Power MOSFET
D
100% R
g
Tested
APPLICATIONS
D
Low-Side DC/DC Conversion
−
Notebook, Server, VRM Module
D
Fixed Telecom
D
SO-8
S
S
S
G
1
2
3
4
Top View
S
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
Ordering Information: Si4368DY—E3
Si4368DY-T1—E3 (Lead Free with Tape and Reel)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a
Pulsed Drain Current (10
ms
Pulse Width)
Continuous Source Current (Diode Conduction)
a
Avalanch Current
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L= 0.1 mH
T
A
= 25_C
T
A
= 70_C
T
A
= 25_C
T
A
= 70_C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
i
AS
P
D
T
J
, T
stg
10 secs
30
"12
25
20
70
2.9
50
3.5
2.2
Steady State
Unit
V
17
13
A
1.3
1.6
1
−55
to 150
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum J
M i
Junction-to-Ambient
a
ti t A bi t
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72704
S-40105—Rev. A, 02-Feb-04
www.vishay.com
t
v
10 sec
Steady State
Steady State
Symbol
R
thJA
R
thJF
Typical
29
67
13
Maximum
35
80
16
Unit
_C/W
C/W
1
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